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Effects of post-metallization annealing of high-K dielectric thin films grown by MOMBE

โœ Scribed by Minseong Yun; Myoung-Seok Kim; Young-Don Ko; Tae-Hyoung Moon; Jang-Hyuk Hong; Jae-Min Myoung; Ilgu Yun

Book ID
104050243
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
531 KB
Volume
77
Category
Article
ISSN
0167-9317

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Statistical modeling of the electrical c
Statistical modeling of the electrical characteristics for HfO2 thin films grown by MOMBE for high-k dielectric applications
โœ Jung Hwan Lee; Kyoung Eun Kweon; Young-Don Ko; Tae-Hyoung Moon; Jae-Min Myoung; ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 853 KB

In this paper, the multiple regression model of electrical characteristics for HfO 2 thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as the accumulation capacitance and the hysteresis index, are the main factors to determine the char