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Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films

✍ Scribed by G. Teowee; J. M. Boulton; C. D. Baertlein; R. K. Wade; D. R. Uhlmann

Publisher
Springer
Year
1994
Tongue
English
Weight
297 KB
Volume
2
Category
Article
ISSN
0928-0707

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## Abstract Indium tin oxide (ITO) thin films (In/Sn = 90:10) prepared by the sol–gel dip‐coating process on glass substrates, followed by annealing in air in the temperature range 150–550 °C were studied. Overall the films structure, surface roughness, and electrical performances are improved, lea