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Effect of annealing on electrical, structural, and optical properties of sol-gel ITO thin films

✍ Scribed by Hammad, Talaat Moussa

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
354 KB
Volume
206
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Indium tin oxide (ITO) thin films (In/Sn = 90:10) prepared by the sol–gel dip‐coating process on glass substrates, followed by annealing in air in the temperature range 150–550 °C were studied. Overall the films structure, surface roughness, and electrical performances are improved, leading to electrical resistivity fifth order of magnitude larger than before annealing and a more compact and crystalline films, translated by a preferential orientation in the (111) direction. Besides that, the films are highly transparent in the visible range, where it shows an average transmittance of 92.3% after annealing to 550 °C. The allowed direct band gap at temperature range 150–550 °C was estimated to be 3.32–4.21 eV, increasing as the annealing temperature also increases.

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