Effects of nitrogen implant activation on the SiC/SiO2 interface of 6H-SiC self-aligned NMOSFET's

✍ Scribed by Lam, M.P.; Das, M.K.; Pan, J.N.; Kornegay, K.T.; Cooper, J.A., Jr.; Melloch, M.R.

• Book ID: 114537147
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 78 KB
• Volume: 45
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.658696