A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect

✍ Scribed by P. A. Ivanov; T. P. Samsonova; V. N. Panteleev; D. Yu. Polyakov

• Book ID: 110126639
• Publisher: Springer
• Year: 2001
• Tongue: English
• Weight: 85 KB
• Volume: 35
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1365197