Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current Degradation

✍ Scribed by Strenger, Christian; Bauer, Anton J.; Ryssel, Heiner

• Book ID: 120776337
• Publisher: Trans Tech Publications, Ltd.
• Year: 2011
• Tongue: English
• Weight: 458 KB
• Volume: 679-680
• Category: Article
• ISSN: 1662-9752
• DOI: 10.4028/www.scientific.net/MSF.679-680.382