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Effects of Chemical Additives of CMP Slurry on Surface Mechanical Characteristics and Material Removal of Copper

โœ Scribed by Chenglong Liao; Dan Guo; Shizhu Wen; Jianbin Luo


Book ID
106551672
Publisher
Springer US
Year
2011
Tongue
English
Weight
797 KB
Volume
45
Category
Article
ISSN
1023-8883

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The ability to predict material removal rates in chemical mechanical planarization (CMP) is an essential ingredient for low cost, high quality IC chips. Recently, models that address the slurry particles have been proposed. We address three such models. The first two differ only in how the number of