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Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN

✍ Scribed by Marcel Placidi; A. Pérez-Tomás; A. Constant; G. Rius; N. Mestres; J. Millán; P. Godignon

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 997 KB
Volume: 255
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.12.084

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