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Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

✍ Scribed by Tomohisa Shiino; Tomohiro Saitoh; Tohru Nakamura; Taroh Inada

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 300 KB
Volume: 267
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2009.01.133

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