✦ LIBER ✦

Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor

✍ Scribed by Jang, Moongyu ;Jun, Myungsim ;Zyung, Taehyoung

Book ID: 121224544
Publisher: AVS (American Vacuum Society)
Year: 2010
Tongue: English
Weight: 474 KB
Volume: 28
Category: Article
ISSN: 1520-8567
DOI: 10.1116/1.3457936

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High performance platinum-silicided p-ty

High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm

✍ Jun, Myungsim; Park, Youngsam; Hyun, Younghoon; Zyung, Taehyoung; Jang, Moongyu; 📂 Article 📅 2011 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 550 KB

Nanometer scale p-type Schottky barrier

Nanometer scale p-type Schottky barrier metal–oxide-semiconductor field-effect transistor using platinum silicidation through oxide technique combined with two-step annealing process

✍ Yun, Hyung-Joong; Jang, Moongyu; Choi, Sung-Jin; Lee, Young-Boo; Ahn, Kwang-Soon 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 822 KB

The characteristics of sub-10 nm ga

The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

✍ Moongyu Jang; Seongjae Lee 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 782 KB

Formation of erbium-silicide as source a

Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

✍ Moongyu Jang; Yarkyeon Kim; Jaeheon Shin; Seongjae Lee 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 145 KB

Impact of the channel thickness on the p

Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

✍ Knoch, J.; Appenzeller, J. 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 675 KB

High‐mobility p‐channel metal‐oxide‐semi

High‐mobility p‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si

✍ Nayak, D. K.; Woo, J. C. S.; Park, J. S.; Wang, K. L.; MacWilliams, K. P. 📂 Article 📅 1993 🏛 American Institute of Physics 🌐 English ⚖ 573 KB