Nanometer scale p-type Schottky barrier metal–oxide-semiconductor field-effect transistor using platinum silicidation through oxide technique combined with two-step annealing process

✍ Scribed by Yun, Hyung-Joong; Jang, Moongyu; Choi, Sung-Jin; Lee, Young-Boo; Ahn, Kwang-Soon; Choi, Chel-Jong

• Book ID: 123095406
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 822 KB
• Volume: 563
• Category: Article
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2013.02.099