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Effect of Wafer Temperature on High Aspect Ratio Hardmask Etching

✍ Scribed by S. Lee; Y.-C. Tien; Y.-W. Chang


Book ID
110408002
Publisher
Springer
Year
2002
Tongue
English
Weight
199 KB
Volume
22
Category
Article
ISSN
0272-4324

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Advanced etching of silicon based on dee
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Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is