Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen
β Scribed by A Misiuk; J Bak-Misiuk; I.V Antonova; V Raineri; A Romano-Rodriguez; A Bachrouri; H.B Surma; J Ratajczak; J Katcki; J Adamczewska; E.P Neustroev
- Book ID
- 117626621
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 556 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0927-0256
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The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi
Silicon capped by thermal oxide has been implanted with 1 β’ 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality a