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Effect of thermal annealing and hydrogen-plasma treatment in boron-doped microcrystalline silicon

✍ Scribed by Y. Sobajima; S. Kamanaru; H. Muto; J. Chantana; C. Sada; A. Matsuda; H. Okamoto


Book ID
119301048
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
559 KB
Volume
358
Category
Article
ISSN
0022-3093

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The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previou