Transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used to study the temperature evolution of hydrogen plasma induced defects in silicon. Hydrogen plasma treated n-and p-doped Czochralski silicon samples were annealed at temperatures between 200 and 1000 Β°C for up to 10 h i
β¦ LIBER β¦
Thermal anneal activation of defects in hydrogen plasma-treated silicon
β Scribed by C.W. Nam; A. Tanabe; S. Ashok
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 333 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0921-5107
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