Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon

✍ Scribed by A. Henry; O.O. Awadelkarim; J.L. Lindström; G.S. Oehrlein

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 356 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90232-8

✦ Synopsis

The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profi'les of the observed traps have been determined, and their annealing behaviour is studied up to 200 °C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related deject complexes is proposed.