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Processing effects on the electrical properties of defects in silicon

✍ Scribed by A. Castaldini; D. Cavalcoli; A. Cavallini


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
262 KB
Volume
4
Category
Article
ISSN
0921-5107

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The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previou