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Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon

โœ Scribed by B. Colombeau; F. Cristiano; F. Olivie; C. Amand; G. Ben Assayag; A. Claverie


Book ID
114165200
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
207 KB
Volume
186
Category
Article
ISSN
0168-583X

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