dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on quartz and silicon substrates by sputtering of pure tantalum target in the presence of oxygen and argon gases under various substrate temperatures in the range 303-973 K. The variation of cathode potent
Effect of substrate temperature on the physical properties of dc magnetron sputtered Cu2O films
β Scribed by Sivasankar Reddy, A. ;Sreedhara Reddy, P. ;Uthanna, S. ;Venkata Rao, G. ;Klein, A.
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 393 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
Cuprous oxide (Cu~2~O) films were formed by dc reactive magnetron sputtering onto glass substrates held at various temperatures in the range 303β648 K. The substrate temperature was found to be an important parameter in controlling the physical properties of the deposited films. The variation of cathode potential and deposition rate with the substrate temperature was studied. The dependence of crystallographic structure, electrical properties and optical absorption of the films on the substrate temperature was systematically investigated. (Β© 2006 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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