Effect of stress on silicide formation kinetics in thin film titanium–selicon system
✍ Scribed by Rajan V Nagabushnam; Rajiv K Singh; Sujit Sharan
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 383 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1369-8001
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO 2 film on the silicon substrate was found to retard significantly the formation of Ni 2 Si, NiSi and NiSi 2 on (0 0 1)Si. On the other ha
To study the influence of the flame-retardant melamine on foam properties of a polyurethane model system, single, vertical liquid foam films were studied. The presence of particles gives the possibility to observe the complete circulation in the film. The films of the model system have been found to
Cr, Ti, Hf, Zr, Co, Ta, I'd, and Pt. The AI-Cr system was investigated in some detail using a conductance method and nuclear backscattering for reaction-rate measurements. The compounds CrAl, and Cr2AI,, were identified and their growth was found to be diffusion controlled. The temperature dependenc