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Effect of impurities on intrinsic stress in thin ni films

Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
170 KB
Volume
26
Category
Article
ISSN
0042-207X

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โœฆ Synopsis

Cr, Ti, Hf, Zr, Co, Ta, I'd, and Pt. The AI-Cr system was investigated in some detail using a conductance method and nuclear backscattering for reaction-rate measurements. The compounds CrAl, and Cr2AI,, were identified and their growth was found to be diffusion controlled. The temperature dependence of the rate constant for CrAl, obeyed an Arrhenius plot from 300" to 450ยฐC with an activa-

๐Ÿ“œ SIMILAR VOLUMES

Nanoparticulate origin of intrinsic resi
Nanoparticulate origin of intrinsic residual stress in thin films
โœ G. Guisbiers; O. Van Overschelde; M. Wautelet ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 176 KB

The formation of grains in thin films generates intrinsic residual stress. In this work, we present a model of intrinsic residual stress calculation based on the size-dependent phase transitions of the nanograins. Evaporated thin films are produced by condensation from the vapor on the substrate. It