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Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems

✍ Scribed by T Laurila; K Zeng; J Molarius; T Riekkinen; I Suni; J.K Kivilahti

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
613 KB
Volume
64
Category
Article
ISSN
0167-9317

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✦ Synopsis

The effect of oxygen on the reactions in the Si / Ta / Cu and Si / TaC / Cu metallization systems was investigated by utilizing the assessed Ta-O binary and the evaluated ternary Ta-C-O phase diagrams together with detailed transmission electron microscopy (TEM) and secondary ion mass spectrometry analyses (SIMS). The presence of some form of amorphous tantalum oxide at the Ta / Cu and TaC / Cu interfaces was experimentally verified. The formation of the interfacial layers was explained with the help of the assessed phase diagrams as well as with the available kinetic data.

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✍ J.-W. Lim; K. Mimura; M. Isshiki πŸ“‚ Article πŸ“… 2003 πŸ› Institute of Physics and National Institute of Mat 🌐 English βš– 336 KB

Cu/Ta/Si (100) structures deposited by the non-mass separated ion beam deposition system showed a slight resistivity increase at 650 8C due to a Cu agglomeration. To suppress the Cu agglomeration on the Ta layer, a capping layer was deposited on the Cu/Ta/Si structure using Ta or SiO 2 as a suppress