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Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors

✍ Scribed by H. -F. Li; S. Dimitrijev; D. Sweatman; H. B. Harrison

Book ID
107452518
Publisher
Springer US
Year
2000
Tongue
English
Weight
175 KB
Volume
29
Category
Article
ISSN
0361-5235

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πŸ“œ SIMILAR VOLUMES

MOS capacitors obtained by wet oxidation
MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen
✍ A. Poggi; F. Moscatelli; Y. Hijikata; S. Solmi; R. Nipoti πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 196 KB

The manufacture process and the electrical characterization of MOS devices fabricated by wet oxidation of N + implanted n-type 4H-SiC are here presented. Different implantation fluence and energy values were used with the aims to study the effect of the N concentration both at the SiO 2 /SiC interfa