Investigation of 4H-SiC MOS capacitors annealed in diluted N2O at different temperatures

✍ Scribed by P. Zhao; Rusli; Y. Liu; C.C. Tin; W.G. Zhu; J. Ahn

• Book ID: 104050434
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 138 KB
• Volume: 83
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2005.10.026