Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices

✍ Scribed by Zhang, Cher Xuan; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Dhar, Sarit; Ryu, Sei-Hyung; Shen, Xiao; Pantelides, Sokrates T.

• Book ID: 111916978
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 381 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/tns.2011.2168424