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Effect of mismatch strain on band gap in III-V semiconductors

✍ Scribed by Kuo, C. P.; Vong, S. K.; Cohen, R. M.; Stringfellow, G. B.

Book ID
120294372
Publisher
American Institute of Physics
Year
1985
Tongue
English
Weight
544 KB
Volume
57
Category
Article
ISSN
0021-8979

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Band-gap narrowing in novel III-V semico
Band-gap narrowing in novel III-V semiconductors
✍ Jain, S. C.; McGregor, J. M.; Roulston, D. J. πŸ“‚ Article πŸ“… 1990 πŸ› American Institute of Physics 🌐 English βš– 521 KB

A predictive model for band-gap narrowing has been applied to several III-V semiconductors. Band-gap narrowing is expressed as Ξ”Eg =AN1/3+BN1/4+CN1/2 ; values for A, B, and C are predicted for these materials. The commonly used N1/3 relation is shown to be valid for the p-type materials considered,