Valence-band anticrossing in mismatched III-V semiconductor alloys
โ Scribed by Alberi, K.; Wu, J.; Walukiewicz, W.; Yu, K. M.; Dubon, O. D.; Watkins, S. P.; Wang, C. X.; Liu, X.; Cho, Y.-J.; Furdyna, J.
- Book ID
- 121676247
- Publisher
- The American Physical Society
- Year
- 2007
- Tongue
- English
- Weight
- 367 KB
- Volume
- 75
- Category
- Article
- ISSN
- 1098-0121
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Recent high hydrostatic pressure experiments have shown that incorporation of small amounts of nitrogen into conventional III-V compounds to form III-N-V alloys leads to splitting of the conduction band into two subbands. The downward shift of the lower subband edge is responsible for the observed,
Valence band offsets at the heterointerface of lattice-matched alloy semiconductors are investigated with theoretical calculation, which is based on average bond energy theory in conjunction with a cluster expansion method. The predicted relative valence band positions of a wide range of III-V alloy