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Band anticrossing in highly mismatched III V semiconductor alloys

โœ Scribed by Wu, J; Shan, W; Walukiewicz, W

Book ID
120484812
Publisher
Institute of Physics
Year
2002
Tongue
English
Weight
689 KB
Volume
17
Category
Article
ISSN
0268-1242

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Band Anticrossing in IIIโ€“Nโ€“V Alloys
Band Anticrossing in IIIโ€“Nโ€“V Alloys
โœ W. Shan; W. Walukiewicz; K.M. Yu; J.W. Ager III; E.E. Haller; J.F. Geisz; D.J. F ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 305 KB

Recent high hydrostatic pressure experiments have shown that incorporation of small amounts of nitrogen into conventional III-V compounds to form III-N-V alloys leads to splitting of the conduction band into two subbands. The downward shift of the lower subband edge is responsible for the observed,