Band-gap narrowing in novel III-V semiconductors

✍ Scribed by Jain, S. C.; McGregor, J. M.; Roulston, D. J.

• Book ID: 120243121
• Publisher: American Institute of Physics
• Year: 1990
• Tongue: English
• Weight: 521 KB
• Volume: 68
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.346291

✦ Synopsis

A predictive model for band-gap narrowing has been applied to several III-V semiconductors. Band-gap narrowing is expressed as ΔEg =AN1/3+BN1/4+CN1/2 ; values for A, B, and C are predicted for these materials. The commonly used N1/3 relation is shown to be valid for the p-type materials considered, but not for n-type materials.