๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

A narrow-band-gap semiconductor

โœ Scribed by Sofo, J. O.; Mahan, G. D.

Book ID
121297445
Publisher
The American Physical Society
Year
1998
Tongue
English
Weight
290 KB
Volume
58
Category
Article
ISSN
1098-0121

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Photothermal effect in narrow band gap P
Photothermal effect in narrow band gap PbTe semiconductor
โœ Dashevsky, Z.; Kasiyan, V.; Asmontas, S.; Gradauskas, J.; Shirmulis, E.; Flitsiy ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 499 KB
Band-gap narrowing in novel III-V semico
Band-gap narrowing in novel III-V semiconductors
โœ Jain, S. C.; McGregor, J. M.; Roulston, D. J. ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 521 KB
Band-gap narrowing in novel III-V semico
Band-gap narrowing in novel III-V semiconductors
โœ Jain, S. C.; McGregor, J. M.; Roulston, D. J. ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 521 KB

A predictive model for band-gap narrowing has been applied to several III-V semiconductors. Band-gap narrowing is expressed as ฮ”Eg =AN1/3+BN1/4+CN1/2 ; values for A, B, and C are predicted for these materials. The commonly used N1/3 relation is shown to be valid for the p-type materials considered,