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Band-gap narrowing in novel III-V semiconductors

✍ Scribed by Jain, S. C.; McGregor, J. M.; Roulston, D. J.

Book ID: 120243120
Publisher: American Institute of Physics
Year: 1990
Tongue: English
Weight: 521 KB
Volume: 68
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.346291

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A predictive model for band-gap narrowing has been applied to several III-V semiconductors. Band-gap narrowing is expressed as ΔEg =AN1/3+BN1/4+CN1/2 ; values for A, B, and C are predicted for these materials. The commonly used N1/3 relation is shown to be valid for the p-type materials considered,

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