✦ LIBER ✦

Photothermal effect in narrow band gap PbTe semiconductor

✍ Scribed by Dashevsky, Z.; Kasiyan, V.; Asmontas, S.; Gradauskas, J.; Shirmulis, E.; Flitsiyan, E.; Chernyak, L.

Book ID: 120888682
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 499 KB
Volume: 106
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3243081

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electronic structure of defects and defe

Electronic structure of defects and defect clusters in narrow band-gap semiconductor PbTe

✍ Mahanti, S D; Bilc, D 📂 Article 📅 2004 🏛 Institute of Physics 🌐 English ⚖ 825 KB

A narrow-band-gap semiconductor

✍ Sofo, J. O.; Mahan, G. D. 📂 Article 📅 1998 🏛 The American Physical Society 🌐 English ⚖ 290 KB

Band mixing in narrow gap semiconductors

✍ W. Brenig; H. Kasai 📂 Article 📅 1984 🏛 Springer 🌐 English ⚖ 298 KB

Deep defect states in narrow band-gap se

Deep defect states in narrow band-gap semiconductors

✍ S.D. Mahanti; Khang Hoang; Salameh Ahmad 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 365 KB

Band-gap narrowing in novel III-V semico

Band-gap narrowing in novel III-V semiconductors

✍ Jain, S. C.; McGregor, J. M.; Roulston, D. J. 📂 Article 📅 1990 🏛 American Institute of Physics 🌐 English ⚖ 521 KB

Band-gap narrowing in novel III-V semico

Band-gap narrowing in novel III-V semiconductors

✍ Jain, S. C.; McGregor, J. M.; Roulston, D. J. 📂 Article 📅 1990 🏛 American Institute of Physics 🌐 English ⚖ 521 KB

A predictive model for band-gap narrowing has been applied to several III-V semiconductors. Band-gap narrowing is expressed as ΔEg =AN1/3+BN1/4+CN1/2 ; values for A, B, and C are predicted for these materials. The commonly used N1/3 relation is shown to be valid for the p-type materials considered,