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Effect of MeV nitrogen ion implantation on the resistivity transition in Czochralski silicon wafers

✍ Scribed by Byeong-Sam Moon, In-Ji Lee, Jea-Gun Park


Book ID
119937120
Publisher
The Korean Physical Society
Year
2012
Tongue
English
Weight
289 KB
Volume
61
Category
Article
ISSN
0374-4884

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Effect of nitrogen doping on the minorit
✍ Can Cui; Deren Yang; Xuegong Yu; Xiangyang Ma; Liben Li; Duanlin Que πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 121 KB

The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si

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✍ Ma, Xiangyang ;Tian, Daxi ;Gong, Longfei ;Yang, Deren πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 206 KB

## Abstract The formation of an oxygen precipitate denuded zone in nitrogen‐doped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit