Effect of MeV nitrogen ion implantation on the resistivity transition in Czochralski silicon wafers
β Scribed by Byeong-Sam Moon, In-Ji Lee, Jea-Gun Park
- Book ID
- 119937120
- Publisher
- The Korean Physical Society
- Year
- 2012
- Tongue
- English
- Weight
- 289 KB
- Volume
- 61
- Category
- Article
- ISSN
- 0374-4884
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si
## Abstract The formation of an oxygen precipitate denuded zone in nitrogenβdoped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit