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On the effects of implantation of ions in the MeV energy range into silicon

✍ Scribed by L.K. Wang; C.T. Chuang; G.P. Li


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
460 KB
Volume
29
Category
Article
ISSN
0038-1101

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Effect of ion energy on the implantation
✍ O. Puglisi; G. Marletta; S. Pignataro; G. Foti; A. Trovato; E. Rimini πŸ“‚ Article πŸ“… 1981 πŸ› Elsevier Science 🌐 English βš– 442 KB

Sohd benzene has been unplanted with mert-gas Ions atth energes rangmg from 16 to 100 keV Ihe small varuuon observed UI the relarwe concentration of the products has been found to depend mamly on The fact that the r&awe acsht of the nuclear and electromc noppmg mechantsms IS changmg along the ener\_