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Effect of ion dose and annealing mode on photoluminescence from SiO2implanted with Si ions

✍ Scribed by G. A. Kachurin; A. F. Leier; K. S. Zhuravlev; I. E. Tyschenko; A. K. Gutakovskii; V. A. Volodin; W. Skorupa; R. A. Yankov

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