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Formation of photoluminescence centers during annealing of SiO2layers implanted with Ge ions

✍ Scribed by G. A. Kachurin; L. Rebohle; I. E. Tyschenko; V. A. Volodin; M. Voelskow; W. Skorupa; H. Froeb

No coin nor oath required. For personal study only.

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Silicon nanocrystal formation upon annea

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Short-wavelength photoluminescence of Si

✍ G. A. Kachurin; I. E. Tyschenko; L. Rebohle; W. Skorupa; R. A. Yankov; H. Froeb; 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 97 KB

Features of the formation of silicon nan

✍ N. N. Ovsyuk; Venu Mankad; Sanjeev K. Gupta; Prafulla K. Jha; G. A. Kachurin 📂 Article 📅 2011 🏛 Allerton Press Inc 🌐 English ⚖ 502 KB

Effect of ion dose and annealing mode on

✍ G. A. Kachurin; A. F. Leier; K. S. Zhuravlev; I. E. Tyschenko; A. K. Gutakovskii 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 823 KB

Photoluminescence of Si3N4films implante

✍ I. E. Tyschenko; V. A. Volodin; L. Rebohle; M. Voelskov; V. Skorupa 📂 Article 📅 1999 🏛 Springer 🌐 English ⚖ 132 KB

Photoluminescence studies of light emiss

✍ P Mutti; G Ghislotti; L Meda; E Grilli; M Guzzi; L Zanghieri; R Cubeddu; A Piffe 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 383 KB