Effect of interfacial states on the binding energies of electrons and holes in InAs/GaAs quantum dots
β Scribed by Williamson, A. J.; Zunger, Alex
- Book ID
- 127216909
- Publisher
- The American Physical Society
- Year
- 1998
- Tongue
- English
- Weight
- 563 KB
- Volume
- 58
- Category
- Article
- ISSN
- 1098-0121
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π SIMILAR VOLUMES
Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 β’ C. The use of n-and p-type GaAs matrices allows u
We summarize here results of calculations and experiments on electron and valence hole states in a single pair of vertically stacked and electronically coupled InAs self-assembled quantum dots. In perfectly aligned quantum dots one can relate an electron-hole complex to a pair of entangled qubits. T