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Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

✍ Scribed by Saïdi, I.; Sellami, K.; Yahyaoui, M.; Testelin, C.; Boujdaria, K.

Book ID
121679983
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
765 KB
Volume
109
Category
Article
ISSN
0021-8979

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Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 • C. The use of n-and p-type GaAs matrices allows u