𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of hydrogen on the properties of Pd/GaAs/InGaAs diode structures with quantum wells

✍ Scribed by I. A. Karpovich; S. V. Tikhov; E. L. Shobolov; B. N. Zvonkov

Book ID
110131247
Publisher
Springer
Year
2002
Tongue
English
Weight
72 KB
Volume
36
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Effect of alloy disorder and structural
Effect of alloy disorder and structural defects on excitonic properties in (100)- and (311)-Oriented InGaAs/GaAs quantum wells
✍ F.E.G. GuimarΓ£es; D. Lubyshev; V.A. Chitta; P. Basmaji πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 211 KB

The properties of excitonic states in pseudomorphic, (100)- and (311)-oriented \(\mathrm{In}_{0.2} \mathrm{Gr}_{0}{ }_{8} \mathrm{As} / \mathrm{GaAs}\) quantum well (QW) structures are investigated. Strained QW's with different states of strain and segregation were grown by molecular beam epitaxy. N

The effects of strain on the confinement
The effects of strain on the confinement profile of disordered InGaAs/GaAs single quantum wells
✍ Joseph Micallef; E.Herbert Li; Bernard L. Weiss πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 284 KB

The effects of strain on the carrier confinement profile of disordered InGaAs/GaAs single quantum wells, assuming an error function compositional profile after interdiffusion, are studied here. Details are given showing how strain and disonder modify the confinement profile, the ground state transit