๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Effect of hydrogen on the photoelectronic properties of GaAs/InGaAs quantum-well heterostructures with an island palladium layer on the surface

โœ Scribed by I. A. Karpovich; S. V. Tikhov; E. L. Shobolov; B. N. Zvonkov


Book ID
110132659
Publisher
Springer
Year
2002
Tongue
English
Weight
63 KB
Volume
47
Category
Article
ISSN
1063-7842

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Influence of the cap layer thickness on
โœ J. Dreybrodt; F. Faller; A. Forchel; J.P. Reithmaier ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 280 KB

We present photoluminescence investigations of GalnAs/GaAs quantum wells with thin cap layers ranging from 20 nm in thickness down to a complete cap layer removal. We observe a strong blue shift of up to 35 meV for an uncovered surface quantum well. A further shift up to the GaAs band edge can be ob