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Influence of the cap layer thickness on photoluminescence properties in strained InGaAs/GaAs single quantum wells

โœ Scribed by Shen, W. Z. ;Tang, W. G. ;Shen, S. C. ;Wang, S. M. ;Anderson, T.

Publisher
Springer
Year
1994
Tongue
English
Weight
326 KB
Volume
15
Category
Article
ISSN
0195-9271

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