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Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices

✍ Scribed by Ilahi, B. ;Sfaxi, L. ;Hassen, F. ;Bouzaîene, L. ;Maaref, H. ;Salem, B. ;Bremond, G. ;Marty, O.


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
132 KB
Volume
199
Category
Article
ISSN
0031-8965

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InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 8C). With increasing excitation densi