Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness
β Scribed by R.J. Kashtiban; U. Bangert; M. Missous
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 971 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0026-2692
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A low-temperature micro-photoluminescence (m-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The interna
InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 8C). With increasing excitation densi
We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 Γ x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 Γ x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized