𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of indium distribution on optical properties in InGaAs/GaAs quantum wells

✍ Scribed by Jia, Guozhi ;Yao, Jianghong ;Shu, Yongchun ;Xin, Xiaodong ;Pi, Biao

Book ID
107622243
Publisher
Higher Education Press and Springer
Year
2009
Tongue
English
Weight
159 KB
Volume
2
Category
Article
ISSN
1674-4128

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Strain effects on carrier lifetimes in I
Strain effects on carrier lifetimes in InGaAs/(Al)GaAs multiple quantum wells
✍ M.H. Moloney; J. Hegarty; L. Buydens; P. Demeester; R. Grey; J. Woodhead πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 379 KB

Lifetimes were measured in several InGaAs/(Al)GaAs samples with various levels of strain and strain relief, with thick barriers and with GaAs barriers. Lifetimes of the order of 0.5 ns were measured. We have found that the introduction of indium, to obtain InGaAs wells, causes a dramatic decrease in

Effects of Indium Segregation and Well-W
Effects of Indium Segregation and Well-Width Fluctuations on Optical Properties of InGaN/GaN Quantum Wells
✍ A. Soltani Vala; M.J. Godfrey; P. Dawson πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 78 KB πŸ‘ 2 views

We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with