✦ LIBER ✦

Effect of Gate Overlap and Source/Drain Doping Gradient on 10-nm CMOS Performance

✍ Scribed by Minjian Liu; Ming Cai; Bo Yu; Yuan Taur

Book ID: 114618504
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 182 KB
Volume: 53
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2006.885103

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Impact of gate-to-source/drain overlap l

Impact of gate-to-source/drain overlap length on 80-nm CMOS circuit performance

✍ Maitra, K.; Bhat, N. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 286 KB

The effects of source/drain and gate ove

The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors

✍ Ali Naderi; Parviz Keshavarzi 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 981 KB

Gate-source-drain architecture impact on

Gate-source-drain architecture impact on DC and RF performance of sub-100-nm elevated source/drain NMOS transistors

✍ Jeamsaksiri, W.; Jurczak, M.; Grau, L.; Linten, D.; Augendre, E.; De Potter, M.; 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 684 KB

Performance advantage of Schottky source

Performance advantage of Schottky source/drain in ultrathin-body silicon-on-insulator and dual-gate CMOS

✍ Connelly, D.; Faulkner, C.; Grupp, D.E. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 973 KB

Effect of Drain Doping Profile on Double

Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance

✍ Vijayvargiya, Vikas; Vishvakarma, Santosh Kumar 📂 Article 📅 2014 🏛 IEEE 🌐 English ⚖ 851 KB

Effect of source-drain spacing on DC and

Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs

✍ Yamashita, Y.; Watanabe, I.; Endoh, A.; Hirose, N.; Mimura, T.; Matsui, T. 📂 Article 📅 2011 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 220 KB