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Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs

✍ Scribed by Yamashita, Y.; Watanabe, I.; Endoh, A.; Hirose, N.; Mimura, T.; Matsui, T.

Book ID: 127379403
Publisher: The Institution of Electrical Engineers
Year: 2011
Tongue: English
Weight: 220 KB
Volume: 47
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el.2010.3213

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