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Effects of RF stress on power and pulsed IV characteristics of AlGaN∕GaN HEMTs with field-plate gates

✍ Scribed by Lee, C.; Tserng, H.; Witkowski, L.; Saunier, P.; Guo, S.; Albert, B.; Birkhahn, R.; Munns, G.

Book ID: 125507172
Publisher: The Institution of Electrical Engineers
Year: 2004
Tongue: English
Weight: 230 KB
Volume: 40
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el:20046921

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