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[IEEE 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS) - Nanjing, China (2012.09.18-2012.09.20)] 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications - A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band

✍ Scribed by Dechun, Guo; Kankan, Qi; Junfeng, Cui; Xiaobin, Luo; Chao, Yue

Book ID: 120042398
Publisher: IEEE
Year: 2012
Weight: 785 KB
Category: Article
ISBN: 1467309036
DOI: 10.1109/IMWS2.2012.6338225

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