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Effect of develop time on process windows in sub-half micron optical lithography

โœ Scribed by G. Arthur; B. Martin; C. Wallace

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
288 KB
Volume
46
Category
Article
ISSN
0167-9317

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โœฆ Synopsis

The effect of develop time (DT) on process control of the sub-half-micron optical lithography step of a production CMOS process is examined. It is shown that develop times greater than those generally used increase the depth-of-focus (DOF), exposure latitude (EL), linearity, exposure margin and resist sidewall angle, thereby improving the process capability. Results are given for both practical experiment and simulation using PROLITH/2. The simulation parameters used have been highly refined to give excellent correlation with experiment over a wide range of conditions.

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The effect of resist thickness on depth-of-focus (DOF) is examined. It is seen that for maximum DOF the maximum in-coupling point of the swing curve must be selected whether the substrate is highly reflective bare silicon or one utilising a bottom anti-reflective coating (BARC). In addition, it is s