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Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents

✍ Scribed by A. Bouhdada; A. Nouacry; S. Bakkali; A. Touhami; R. Marrakh

Book ID: 104157987
Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 194 KB
Volume: 30
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(98)00073-1

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✦ Synopsis

The increase of the MOS integration scale entails the presence of strong electrical fields in the MOS channel transistor, which cause the injection of hot carriers in the gate oxide and create defects at the Si/SiO 2 interface and in the oxide layer. These defects induce leakage currents and are responsible for degradation of circuit performances and transistor ageing. The aim of this work is to investigate the influence of defects localised in the oxide near the drain of an NMOS transistor in saturation mode on the variation of substrate and drain currents as a function of gate voltage.

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